用于薄膜封装的锥形侧壁SiO2等离子蚀刻

2016 IEEE 18th Electronics Packaging Technology Conference (EPTC) Pub Date : 2016-11-01 DOI:10.1109/EPTC.2016.7861569

V. Bliznetsov, Bin Li, Jaewung Lee, Huamao Lin

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引用次数: 1

摘要

提出了解决MEMS薄膜封装中AlN帽层裂纹问题的方法。通过开发具有光滑锥形侧壁的牺牲型SiO2刻蚀工艺，提高了后续沉积AlN帽层的质量，实现了单帽层可靠的器件密封。

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Plasma etching of SiO2 with tapered sidewall for thin film encapsulation

We proposed the way to solve the problem of cracks in AlN cap layer for thin film encapsulation of MEMS. By development of sacrificial SiO2 etching with smooth tapered sidewall, the quality of subsequently deposited AlN cap layer is improved and reliable device sealing is achieved with a single cap layer.

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2016 IEEE 18th Electronics Packaging Technology Conference (EPTC)

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