{"title":"电流和电压应力对硅基异质结双极晶体管直流特性的影响","authors":"K. Liao, R. Reif, T. Kamins","doi":"10.1109/BIPOL.1994.587896","DOIUrl":null,"url":null,"abstract":"Degradation of SiGe-base HBTs under high-forward-current and reverse-bias stresses are investigated. The observations are explained using existing homojunction theories. Inclusion of Ge into the base may potentially improve the junction reliability of bipolar transistors.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors\",\"authors\":\"K. Liao, R. Reif, T. Kamins\",\"doi\":\"10.1109/BIPOL.1994.587896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Degradation of SiGe-base HBTs under high-forward-current and reverse-bias stresses are investigated. The observations are explained using existing homojunction theories. Inclusion of Ge into the base may potentially improve the junction reliability of bipolar transistors.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors
Degradation of SiGe-base HBTs under high-forward-current and reverse-bias stresses are investigated. The observations are explained using existing homojunction theories. Inclusion of Ge into the base may potentially improve the junction reliability of bipolar transistors.
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