28nm节点体与FDSOI可靠性比较

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241805

X. Federspiel, D. Angot, M. Rafik, F. Cacho, A. Bajolet, N. Planes, D. Roy, M. Haond, F. Arnaud

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引用次数: 37

摘要

在本文中，我们介绍了FDSOI和批量28nm技术制造的fet和fet器件的TDDB, HCI和BTI可靠性表征。28nm FDSOI器件的性能提高了32%，功耗降低了40%，并改善了匹配。从器件级测试来看，28nm FDSOI也显示出与28块体器件相似的内在可靠性行为，这让人们对该技术的稳健性充满信心。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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28nm node bulk vs FDSOI reliability comparison

In this paper, we present TDDB, HCI and BTI reliability characterization of Nfet and Pfet devices issued from FDSOI and bulk 28nm technologies. 28nm FDSOI devices achieve 32% improved performance, 40% reduced power consumption and improved matching. From device level tests, 28nm FDSOI also demonstrates intrinsic reliability behavior similar to 28 bulk devices, giving confidence in the robustness of this technology.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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