一种用于低压非易失性存储器的电流模式感测放大器

1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon Pub Date : 1996-10-09 DOI:10.1109/ICISS.1996.552421

C. Calligaro, P. Rolandi, N. Telecco, G. Torelli

{"title":"一种用于低压非易失性存储器的电流模式感测放大器","authors":"C. Calligaro, P. Rolandi, N. Telecco, G. Torelli","doi":"10.1109/ICISS.1996.552421","DOIUrl":null,"url":null,"abstract":"The market demand for high speed and low voltage non-volatile memories asks for much more efficient sense amplifiers. Actually a good sense amplifier works with 5 V power supply and is able to detect the cell content in less than 20 ns but in the future these constraints will become 3 V for power supply and less than 10 ns for sensing time. In this paper a 3 V power supply with 9 ns sensing time current mode sense amplifier is presented. It has been designed for a very small EPROM array and integrated in a 0.8 /spl mu/m technology (0.6 /spl mu/m in the matrix). Experimental result shows the overall sensing time to be lower than 10 ns even with 2.7 V power supply.","PeriodicalId":131620,"journal":{"name":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","volume":"214 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A current-mode sense amplifier for low voltage non-volatile memories\",\"authors\":\"C. Calligaro, P. Rolandi, N. Telecco, G. Torelli\",\"doi\":\"10.1109/ICISS.1996.552421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The market demand for high speed and low voltage non-volatile memories asks for much more efficient sense amplifiers. Actually a good sense amplifier works with 5 V power supply and is able to detect the cell content in less than 20 ns but in the future these constraints will become 3 V for power supply and less than 10 ns for sensing time. In this paper a 3 V power supply with 9 ns sensing time current mode sense amplifier is presented. It has been designed for a very small EPROM array and integrated in a 0.8 /spl mu/m technology (0.6 /spl mu/m in the matrix). Experimental result shows the overall sensing time to be lower than 10 ns even with 2.7 V power supply.\",\"PeriodicalId\":131620,\"journal\":{\"name\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"volume\":\"214 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICISS.1996.552421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISS.1996.552421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

市场对高速低电压非易失性存储器的需求要求更高效的感测放大器。实际上，一个好的感测放大器工作在5 V电源下，能够在不到20 ns的时间内检测细胞内容，但在未来，这些限制将变成3 V电源和小于10 ns的感测时间。本文设计了一种具有9ns传感时间电流模式放大器的3v电源。它是为一个非常小的EPROM阵列设计的，集成在0.8 /spl mu/m的技术中(矩阵为0.6 /spl mu/m)。实验结果表明，即使在2.7 V的电源下，传感时间也小于10 ns。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A current-mode sense amplifier for low voltage non-volatile memories

The market demand for high speed and low voltage non-volatile memories asks for much more efficient sense amplifiers. Actually a good sense amplifier works with 5 V power supply and is able to detect the cell content in less than 20 ns but in the future these constraints will become 3 V for power supply and less than 10 ns for sensing time. In this paper a 3 V power supply with 9 ns sensing time current mode sense amplifier is presented. It has been designed for a very small EPROM array and integrated in a 0.8 /spl mu/m technology (0.6 /spl mu/m in the matrix). Experimental result shows the overall sensing time to be lower than 10 ns even with 2.7 V power supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon

自引率

0.00%

发文量