L. Ragnarsson, H. Dekkers, P. Matagne, T. Schram, T. Conard, N. Horiguchi, A. Thean
{"title":"N7体finfet零厚度多功功能解决方案","authors":"L. Ragnarsson, H. Dekkers, P. Matagne, T. Schram, T. Conard, N. Horiguchi, A. Thean","doi":"10.1109/VLSIT.2016.7573393","DOIUrl":null,"url":null,"abstract":"A novel multi work function process is used to demonstrate up to 250 mV effective work function shifts of nMOS devices. The process use SiH4-soak of ALD TiN to change its barrier properties with ALD TiAl. FinFET devices are demonstrated with ~100 mV VT-shift for 24-nm-LG devices resulting in 20× reduction in off-state leakage at unaffected sub threshold slope and improved mismatch behavior. A patterning scheme using an nMOS first RMG process is proposed and demonstrated.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Zero-thickness multi work function solutions for N7 bulk FinFETs\",\"authors\":\"L. Ragnarsson, H. Dekkers, P. Matagne, T. Schram, T. Conard, N. Horiguchi, A. Thean\",\"doi\":\"10.1109/VLSIT.2016.7573393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel multi work function process is used to demonstrate up to 250 mV effective work function shifts of nMOS devices. The process use SiH4-soak of ALD TiN to change its barrier properties with ALD TiAl. FinFET devices are demonstrated with ~100 mV VT-shift for 24-nm-LG devices resulting in 20× reduction in off-state leakage at unaffected sub threshold slope and improved mismatch behavior. A patterning scheme using an nMOS first RMG process is proposed and demonstrated.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Zero-thickness multi work function solutions for N7 bulk FinFETs
A novel multi work function process is used to demonstrate up to 250 mV effective work function shifts of nMOS devices. The process use SiH4-soak of ALD TiN to change its barrier properties with ALD TiAl. FinFET devices are demonstrated with ~100 mV VT-shift for 24-nm-LG devices resulting in 20× reduction in off-state leakage at unaffected sub threshold slope and improved mismatch behavior. A patterning scheme using an nMOS first RMG process is proposed and demonstrated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
