6" SOI晶圆表面形貌的AFM研究

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344548

T. Neal, P.C. Karulkar

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摘要

本文报告的工作包括对无外延的6" SIMOX SOI晶圆的表面质量进行了广泛的原子力显微镜研究，同时研究了19nm或9nm厚栅氧化物的可靠性。结果表明，AFM研究将允许快速开发高质量的SOI基板，并且当AFM用作质量控制工具时，将确保提供高质量的基板。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An AFM study of surface morphology of commercial 6" SOI wafers

Work reported in this paper involved an extensive Atomic Force Microscopic investigation of the surface quality of 6" SIMOX SOI wafers without any epitaxy in conjunction with a study of reliability of 19 nm or 9 nm thick gate oxide. The results illustrate that AFM studies will allow rapid development of high quality SOI substrates and that AFM, when used as a quality control tool, will assure supply of quality substrates.<>

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Proceedings of 1993 IEEE International SOI Conference

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