基于inp的HBTs全热流体动力学耦合模拟

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307464

A. Benvenuti, G. Ghione, M. Pinto, W. M. Coughran, N. Schryer

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引用次数: 11

摘要

采用一维全热流体动力学模型，采用改进的上绕方案进行离散化，分析了InP-GaInAs异质结双极晶体管(HBTs)的自一致热学和电学行为。利用我们的软件方法所允许的灵活性，通过与以前的模型的比较，证明了对流项和热效应的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Coupled thermal-fully hydrodynamic simulation of InP-based HBTs

We analyzed the self-consistent thermal and electrical behavior of InP-GaInAs heterojunction bipolar transistors (HBTs) with a coupled 1D thermal-fully hydrodynamic model, discretized with an improved upwinding scheme. Taking advantage of the flexibility allowed by our software approach, the role of convective terms and thermal effects is demonstrated by comparison with previous models.<>

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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