使用晶圆级底填料在细间距封装中堆叠薄芯片的Cu/Ni/SnAg微凸点组装分析

Chang-Chun Lee, Tsung-Fu Yang, Kuo-Shu Kao, Ren-Chin Cheng, C. Zhan
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引用次数: 0

摘要

为了提高微凸点在多薄芯片堆积过程和温度循环测试中的装配质量和机械可靠性,提出了一种新的晶圆级下填工艺。然而,通过热压缩方法组装WLUF的过程中,观察到堆叠芯片之间发生严重的翘曲或间隙减小。这在客观上不利于实现三维集成电路封装。为了解决这一紧迫问题,本研究提出了一种基于有限元方法的面向过程的应力模拟,并与实验数据进行了对比,以找出根本原因。分析结果表明,引起片上封装内部热机械应力的主要影响因素分别是WLUF过程中的巨大温差和WLUF的力学性能。研究发现,采用低热膨胀系数和低杨氏模量的WLUF有利于降低临界微凸点的塑性应变。此外,通过采用假关节布置的微凸点阵列布局设计,可以显著提高整个封装结构的共平面度。模拟预测结果表明,如果在最外层微凸点附近放置3个以上的假关节,在2.0 kg的结合力载荷下,封装中心与封装顶部表面芯片边缘之间的翘曲变化将小于70 nm。同时,在热循环载荷期间,在临界微凸点上产生的最小等效塑性应变为~ 0.87%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Assembly analysis of Cu/Ni/SnAg microbump for stacking thin chips in a fine pitch package using a wafer-level underfill
To enhance assembly quality and mechanical reliability of microbumps during both stacking process of multi thin chips and temperature cycling tests, a novel fabricated technique of wafer level underfill (WLUF) is proposed to resolve the foregoing concerned problem. However, the occurrence of a serious warped condition or gap reduction between stacked chips is observed through the assembly procedures of WLUF with a thermal-compression approach. This is harmful to the objective achievements of a three-dimensional integrated circuits package. In order to address this urgent issue, the research presents a process-oriented stress simulation based on finite element method to find the root cause as compared with experimental data. The analytic results indicate that the major influenced factors inducing thermo-mechanical stress within a chip-on-chip package are resulted from a huge temperature difference in WLUF process and mechanical properties of WLUF, respectively. It is found that the use of WLUF with a low coefficient of thermal expansion and a low Young's modulus is beneficial to reduce plastic strain of critical microbumps. Moreover, through the utilization of layout designs of microbumps array with the arrangements of dummy joints, the significant improvements of co-planarity in a whole packaging structure could be achieved. The simulated predictions point out that as more than three of dummy joints is put nearby the outermost microbump, a warpage variation between the packaging center and chip edge at the top surface of a package under a load of a 2.0 kg bonding force would be smaller than 70 nm. At the same time, a minimum equivalent plastic strain of ∼0.87 % generated on the critical microbump is obtained during a thermal cycling load.
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