极低Keff (1.9) Cu互连与使用SiOC形成的气隙

2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI:10.1109/IITC.2007.382364

T. Harada, A. Ueki, K. Tomita, K. Hashimoto, J. Shibata, H. Okamura, K. Yoshikawa, T. Iseki, M. Higashi, S. Maejima, K. Nomura, K. Goto, T. Shono, S. Muranaka, N. Torazawa, S. Hirao, M. Matsumoto, T. Sasaki, S. Matsumoto, S. Ogawa, M. Fujisawa, A. Ishii, M. Matsuura, T. Ueda

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引用次数: 10

摘要

与Keff 2.0以下的双damascene Cu互连首次被证明。以精心设计的方式用低K SiOC薄膜在Cu线之间形成气隙。引入cop帽层来保护Cu线并消除介电衬里层。此外，还应用了气隙排除技术(AGE)来解决气隙相关的关键问题。在65 nm设计规则下获得了1.9的Keff，远远超过了ITRS的目标(2.5~2.8)。还证实了气隙的形成抑制了线路间的漏电流。

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Extremely Low Keff (1.9) Cu Interconnects with Air Gap Formed Using SiOC

Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was obtained at 65 nm design rule, which surpassed by far ITRS target (2.5~2.8) for hp 45. It was also confirmed that leakage current between lines was suppressed by the formation of the air gaps.

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2007 IEEE International Interconnect Technology Conferencee

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