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质子辐照功率器件中复合寿命的实验测量

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856826
S. Daliento, A. Sanseverino, P. Spirito, G. Busatto, J. Wiss
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引用次数: 1

摘要

给出了质子注入过程诱导的复合寿命谱的实验测量结果。结果表明，差分技术具有监测全寿命工程过程的能力。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Experimental measurements of recombination lifetime in proton irradiated power devices
Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes.
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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
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