短沟道mosfet的热噪声建模

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233642

Kwangseok Han, Kwyro Lee, Hyungcheol Shin

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引用次数: 50

摘要

在这项工作中，首次提出了一个基于物理的MOSFET漏极热噪声电流模型，该模型适用于所有沟道长度。对通道长度低至0.18 /spl mu/m的器件进行了大量的噪声和电荷测量实验，验证了该模型的有效性。在整个V/sub GS/和V/sub DS/偏置区域，测量和模拟的漏极热噪声非常吻合。

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Thermal noise modeling for short-channel MOSFETs

In this work, a physics-based MOSFET drain thermal noise current model valid for all channel lengths was presented for the first time. The derived model was verified by extensive experimental noise and charge measurement of devices with channel lengths down to 0.18 /spl mu/m. Excellent agreement between measured and modeled drain thermal noise was obtained for the entire V/sub GS/ and V/sub DS/ bias regions.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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