{"title":"带光源的功能垂直合并MOS元件的数值模拟","authors":"A. Bubennikov, V. Rakitin, A. Zykov","doi":"10.1109/ICM.2001.997646","DOIUrl":null,"url":null,"abstract":"Functional optoelectronic vertical merged MOS (OVMMOS) elements are considered with optical power supply increasing the packaging density for advanced high-speed low-power deep-submicron ULSI . Two types of new OVVMOS logical elements are proposed, analyzed and simulated. Low-voltage low-power OVMMOS with combined channels for electrons and holes to increase integration level are simulated using 2D numerical device-circuit simulators (DCS). The problems of low light power operation and optimization of OVMMOS elements are investigated using 2D-DCS.","PeriodicalId":360389,"journal":{"name":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical simulation of functional vertical merged MOS elements with optical supply\",\"authors\":\"A. Bubennikov, V. Rakitin, A. Zykov\",\"doi\":\"10.1109/ICM.2001.997646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Functional optoelectronic vertical merged MOS (OVMMOS) elements are considered with optical power supply increasing the packaging density for advanced high-speed low-power deep-submicron ULSI . Two types of new OVVMOS logical elements are proposed, analyzed and simulated. Low-voltage low-power OVMMOS with combined channels for electrons and holes to increase integration level are simulated using 2D numerical device-circuit simulators (DCS). The problems of low light power operation and optimization of OVMMOS elements are investigated using 2D-DCS.\",\"PeriodicalId\":360389,\"journal\":{\"name\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2001.997646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2001.997646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulation of functional vertical merged MOS elements with optical supply
Functional optoelectronic vertical merged MOS (OVMMOS) elements are considered with optical power supply increasing the packaging density for advanced high-speed low-power deep-submicron ULSI . Two types of new OVVMOS logical elements are proposed, analyzed and simulated. Low-voltage low-power OVMMOS with combined channels for electrons and holes to increase integration level are simulated using 2D numerical device-circuit simulators (DCS). The problems of low light power operation and optimization of OVMMOS elements are investigated using 2D-DCS.
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