非对称低温键合结构采用超薄缓冲层技术进行三维集成

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564307

Hao-Wen Liang, Ting-Yang Yu, Yao-Jen Chang, Kuan-Neng Chen

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引用次数: 1

摘要

研究了带Ni超薄缓冲层的晶圆级Sn/ in - cu键合结构，以降低焊料厚度、键合温度和持续时间。此外，非对称键合结构能够将焊料和电隔离层的制造过程分开。这是一种很有前途的应用于三维积分杂化键合的方法。

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Asymmetric low temperature bonding structure using ultra-thin buffer layer technique for 3D integration

Wafer-level Sn/In-Cu bonding structure with Ni ultra-thin buffer layer is investigated to achieve a reduction in solder thickness, bonding temperature and duration. Furthermore, the asymmetric bonding structure is able to separate the manufacturing process of solder and electrical isolation layer. It is a promising approach for the application on hybrid bonding of three-dimensional integration.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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