用于抑制同时开关噪声和辐射发射的高介电常数薄膜嵌入电容器

2004 International Symposium on Electromagnetic Compatibility (IEEE Cat. No.04CH37559) Pub Date : 2004-11-01 DOI:10.1109/ISEMC.2004.1349864

Hyungsoo Kim, Hyunjeong Park, Y. Jeong, Joungho Kim, SeokKyu-lee, JongKuk-Hong, Youngsoo Hong

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引用次数: 15

摘要

我们深入研究并实验证明了高介电常数薄膜嵌入电容器在降低功率/地阻抗、抑制SSN和高达1ghz频率的辐射发射方面的巨大优势。采用高介电常数的薄膜嵌入电容器，在较宽的频率范围内，包括时钟频率的高次谐波，获得了约10 dB或以上的辐射发射抑制。

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High dielectric constant thin film embedded capacitor for suppression of simultaneous switching noise and radiated emission

We have thoroughly investigated and experimentally demonstrated the great advantages of thin film embedded capacitors of high dielectric constant in reducing power/ground impedance and suppressing SSN and radiated emission up to a frequency of 1 GHz. About 10 dB or more suppression of the radiated emission was acquired for a wide frequency range, including high-numbered harmonics of the clock frequency, by using the thin film embedded capacitor of high dielectric constant.

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来源期刊

2004 International Symposium on Electromagnetic Compatibility (IEEE Cat. No.04CH37559)

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