高密度嵌入式dram的低温金属/ON/ hsg圆柱体电容器工艺

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799391

I. Yamamoto, I. Honma, T. Yamamoto, K. Urabe, K. Inoue, Y. Takaishi, Y. Yamada, K. Tokunaga, R. Kubota, M. Hamada, Y. Kato

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引用次数: 1

摘要

研制了一种最高工艺温度低于700℃的逻辑工艺兼容的低温半球形晶粒(HSG)圆柱电容器工艺。磷掺杂PH/sub - 3/-退火和金属板电极的使用有效地抑制了hsg晶粒和顶电极由于热收支减少而产生的损耗。结合HSG晶粒尺寸优化，高可靠的氮化氧(ON)介电体低温工艺可应用于低至0.13 /spl mu/m的高密度嵌入式DRAM单元设计规则。

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Low-temperature metal/ON/HSG-cylinder capacitor process for high density embedded DRAMs

A logic-process-compatible low-temperature hemispherical grain (HSG) cylinder capacitor process with maximum process temperature below 700/spl deg/C is developed. Depletion in HSG-grains and top-electrodes due to decreasing thermal budget is effectively suppressed by phosphorus doping with PH/sub 3/-annealing and the use of metal plate-electrodes. By combining with the HSG grain size optimization, the low-temperature process with highly reliable oxynitride (ON) dielectrics can be applied to high density embedded DRAM cells down to 0.13 /spl mu/m design rules.

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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