超导器件三维互连中Nb与Si中间层直接键合的键合界面特性

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598360

Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino

{"title":"超导器件三维互连中Nb与Si中间层直接键合的键合界面特性","authors":"Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino","doi":"10.1109/LTB-3D53950.2021.9598360","DOIUrl":null,"url":null,"abstract":"In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices\",\"authors\":\"Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino\",\"doi\":\"10.1109/LTB-3D53950.2021.9598360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.\",\"PeriodicalId\":198318,\"journal\":{\"name\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D53950.2021.9598360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本研究中，沉积的Nb和Si/Nb样品在室温下采用表面活化键合法直接键合。对Nb/Nb界面的透射电镜观察证实存在约3 nm的中间层。在0.3 K的温度下，在Nb薄膜上沉积的Si (5 nm)样品可获得4 ~ 6 mA的超导电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices

In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

自引率

0.00%

发文量