在亚1 V以下射频应用中，最大限度地减少深亚微米SOI mosfet的体稳定性

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799323

Y. Tseng, W.M. Huang, M. Mendicino, P. Welch, V. Ilderem, J. Woo

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引用次数: 7

摘要

我们报告了广泛的研究SOI体不稳定性和噪声约束依赖于器件缩放的sub- 1v RF SOI CMOS应用。此外，还解决了与这些问题相关的设备参数。

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Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

We report an extensive study on the SOI body instability and the noise constraint dependence on device scaling for sub-1 V RF SOI CMOS applications. Also, the device parameters associated with these issues are addressed.

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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