Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, S. Shiba, N. Hara
{"title":"170 GHz高灵敏度平面掺杂gaassb基后向二极管","authors":"Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, S. Shiba, N. Hara","doi":"10.1109/ICIPRM.2014.6880565","DOIUrl":null,"url":null,"abstract":"Highly sensitive p-GaAsSb/i-InAlAs/n-InGaAs backward diodes up to 170 GHz were achieved by adopting planar doping in the n-InGaAs layer. The planar doping is effective to control interband tunneling and junction capacitance (C<sub>j</sub>) in the diodes. When doping concentration in the n-InGaAs layer was reduced to 1 × 10<sup>17</sup> cm<sup>-3</sup>, backward-diode characteristics were obtained when planar doping was 2 × 10<sup>12</sup> cm<sup>-2</sup>. We achieved an unmatched and matched sensitivity of about 1,000 and 2,257 V/Wusing a relatively large mesa size of 2 × 2 μm<sup>2</sup> at 170 GHz.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly sensitive planar-doped GaAsSb-based backward diodes at 170 GHz\",\"authors\":\"Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, S. Shiba, N. Hara\",\"doi\":\"10.1109/ICIPRM.2014.6880565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly sensitive p-GaAsSb/i-InAlAs/n-InGaAs backward diodes up to 170 GHz were achieved by adopting planar doping in the n-InGaAs layer. The planar doping is effective to control interband tunneling and junction capacitance (C<sub>j</sub>) in the diodes. When doping concentration in the n-InGaAs layer was reduced to 1 × 10<sup>17</sup> cm<sup>-3</sup>, backward-diode characteristics were obtained when planar doping was 2 × 10<sup>12</sup> cm<sup>-2</sup>. We achieved an unmatched and matched sensitivity of about 1,000 and 2,257 V/Wusing a relatively large mesa size of 2 × 2 μm<sup>2</sup> at 170 GHz.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly sensitive planar-doped GaAsSb-based backward diodes at 170 GHz
Highly sensitive p-GaAsSb/i-InAlAs/n-InGaAs backward diodes up to 170 GHz were achieved by adopting planar doping in the n-InGaAs layer. The planar doping is effective to control interband tunneling and junction capacitance (Cj) in the diodes. When doping concentration in the n-InGaAs layer was reduced to 1 × 1017 cm-3, backward-diode characteristics were obtained when planar doping was 2 × 1012 cm-2. We achieved an unmatched and matched sensitivity of about 1,000 and 2,257 V/Wusing a relatively large mesa size of 2 × 2 μm2 at 170 GHz.
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