在300 mm Si衬底上制备的高性能In0.53Ga0.47As finfet

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573361

M. Huang, S. W. Chang, M. Chen, Y. Oniki, H. C. Chen, W. Lee, C. H. Lin, M. A. Khaderbad, K. Y. Lee, Z. Chen, P. Tsai, L. T. Lin, M. Tsai, C. Hung, T. C. Huang, Y. Lin, Y. Yeo, S. Jang, H. Hwang, H. Wang, Carlos H. Díaz

{"title":"在300 mm Si衬底上制备的高性能In0.53Ga0.47As finfet","authors":"M. Huang, S. W. Chang, M. Chen, Y. Oniki, H. C. Chen, W. Lee, C. H. Lin, M. A. Khaderbad, K. Y. Lee, Z. Chen, P. Tsai, L. T. Lin, M. Tsai, C. Hung, T. C. Huang, Y. Lin, Y. Yeo, S. Jang, H. Hwang, H. Wang, Carlos H. Díaz","doi":"10.1109/VLSIT.2016.7573361","DOIUrl":null,"url":null,"abstract":"In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff~105, DIBL=48 mV/V, gm=1510 μS/μm, and Ion=301 μA/μm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT~0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and Ion when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an Ion of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In0.53Ga0.47As FinFETs to the best of our knowledge.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate\",\"authors\":\"M. Huang, S. W. Chang, M. Chen, Y. Oniki, H. C. Chen, W. Lee, C. H. Lin, M. A. Khaderbad, K. Y. Lee, Z. Chen, P. Tsai, L. T. Lin, M. Tsai, C. Hung, T. C. Huang, Y. Lin, Y. Yeo, S. Jang, H. Hwang, H. Wang, Carlos H. Díaz\",\"doi\":\"10.1109/VLSIT.2016.7573361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff~105, DIBL=48 mV/V, gm=1510 μS/μm, and Ion=301 μA/μm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT~0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and Ion when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an Ion of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In0.53Ga0.47As FinFETs to the best of our knowledge.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

在300 mm Si衬底上制备了In0.53Ga0.47As finfet。器件性能优异，具有良好的均匀性(SS=78 mV/dec)。在Vds=0.5V, Lg=120 nm器件时，离子/ off~105, DIBL=48 mV/V, gm=1510 μS/μm，离子=301 μA/μm)。用劈裂- cv法提取了EOT~0.9nm的外场效应迁移率为1731 cm2/V-s。在300mm Si衬底上制备的器件与在晶格匹配的InP衬底上制备的器件在SS和离子中表现出相似的性能。此外，在70 nm高、25nm宽的finfet中，每片离子强度为44.1 μA，是目前所知的In0.53Ga0.47As finfet中离子强度最高的。

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High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

In_0.53Ga_0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., I_on/I_off~10⁵, DIBL=48 mV/V, g_m=1510 μS/μm, and I_on=301 μA/μm at V_ds=0.5V with L_g=120 nm device). The extrinsic field effect mobility of 1731 cm²/V-s with EOT~0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and I_on when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an I_on of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In_0.53Ga_0.47As FinFETs to the best of our knowledge.

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2016 IEEE Symposium on VLSI Technology

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