嵌入式应用环境下汉明码和萧码的实验研究

Grigor Tshagharyan, Gurgen Harutunyan, S. Shoukourian, Y. Zorian
{"title":"嵌入式应用环境下汉明码和萧码的实验研究","authors":"Grigor Tshagharyan, Gurgen Harutunyan, S. Shoukourian, Y. Zorian","doi":"10.1109/EWDTS.2017.8110065","DOIUrl":null,"url":null,"abstract":"Increasing soft error rate and decreasing technological nodes sizes pave a way for Error Correcting Codes (ECC) widespread use in embedded systems. Depending on application safety goals and acceptable performance and area overhead, different codes can be selected. The goal of this paper is to investigate the efficiency and expediency of two of the most prominent ECC codes, Hamming and Hsiao, in the context of embedded memories and provide practical guidance for their exploitation.","PeriodicalId":141333,"journal":{"name":"2017 IEEE East-West Design & Test Symposium (EWDTS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Experimental study on Hamming and Hsiao codes in the context of embedded applications\",\"authors\":\"Grigor Tshagharyan, Gurgen Harutunyan, S. Shoukourian, Y. Zorian\",\"doi\":\"10.1109/EWDTS.2017.8110065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Increasing soft error rate and decreasing technological nodes sizes pave a way for Error Correcting Codes (ECC) widespread use in embedded systems. Depending on application safety goals and acceptable performance and area overhead, different codes can be selected. The goal of this paper is to investigate the efficiency and expediency of two of the most prominent ECC codes, Hamming and Hsiao, in the context of embedded memories and provide practical guidance for their exploitation.\",\"PeriodicalId\":141333,\"journal\":{\"name\":\"2017 IEEE East-West Design & Test Symposium (EWDTS)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE East-West Design & Test Symposium (EWDTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2017.8110065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2017.8110065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

摘要

软错误率的提高和技术节点尺寸的减小为纠错码在嵌入式系统中的广泛应用铺平了道路。根据应用程序安全目标、可接受的性能和区域开销,可以选择不同的代码。本文的目的是研究两种最突出的ECC码,Hamming和Hsiao,在嵌入式存储器的背景下的效率和便利性,并为它们的开发提供实践指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental study on Hamming and Hsiao codes in the context of embedded applications
Increasing soft error rate and decreasing technological nodes sizes pave a way for Error Correcting Codes (ECC) widespread use in embedded systems. Depending on application safety goals and acceptable performance and area overhead, different codes can be selected. The goal of this paper is to investigate the efficiency and expediency of two of the most prominent ECC codes, Hamming and Hsiao, in the context of embedded memories and provide practical guidance for their exploitation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信