采用新型结构MOSFET的同步整流器

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515044

Y. Fukumochi, I. Suga, T. Ono

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引用次数: 4

摘要

针对同步整流器的应用，开发了一种智能沟槽栅基极功率MOSFET。本文介绍了开发该结构所涉及的技术及其特点。此外，在实际DC-DC转换器应用的2'ry侧使用该新型MOSFET进行了实验验证。并与现有的肖特基势垒二极管进行了对比分析。新型沟槽栅MOSFET在此类应用中表现出优异的性能，是提高此类功率转换系统整体效率的可靠选择。

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Synchronous rectifiers using new structure MOSFET

For synchronous rectifier application, a smart trenched-gate base power MOSFET has been developed. This paper describes the technology involved in developing this structure and its features. Also, experimental verification of this new MOSFET is done using it on the 2'ry side of an actual DC-DC converter application. The results are analyzed and compared with the state-of-the art Schottky barrier diode. The new trenched-gate MOSFET shows excellent performance in such application and proves to be a sure choice for elevating the overall efficiency of such power conversion systems.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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