D. Louis, A. Beverina, C. Arvet, E. Lajoinie, C. Peyne, D. Holmes, D. Maloney, S. Lee, W.M. Lee
{"title":"与低钾电介质和铜兼容的清洗工艺策略:现状、演变和观点","authors":"D. Louis, A. Beverina, C. Arvet, E. Lajoinie, C. Peyne, D. Holmes, D. Maloney, S. Lee, W.M. Lee","doi":"10.1109/IITC.2000.854339","DOIUrl":null,"url":null,"abstract":"This work presents an analysis of interconnect cleaning for low-k/copper integration. Analytical and electrical data are combined to understand the mechanisms and efficacy of various available cleaning chemistries in the presence of Cu and organic, Si-based, and hybrid dielectrics.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Cleaning process strategies compatible with low-k dielectric and copper: state of the art, evolution and perspectives\",\"authors\":\"D. Louis, A. Beverina, C. Arvet, E. Lajoinie, C. Peyne, D. Holmes, D. Maloney, S. Lee, W.M. Lee\",\"doi\":\"10.1109/IITC.2000.854339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents an analysis of interconnect cleaning for low-k/copper integration. Analytical and electrical data are combined to understand the mechanisms and efficacy of various available cleaning chemistries in the presence of Cu and organic, Si-based, and hybrid dielectrics.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cleaning process strategies compatible with low-k dielectric and copper: state of the art, evolution and perspectives
This work presents an analysis of interconnect cleaning for low-k/copper integration. Analytical and electrical data are combined to understand the mechanisms and efficacy of various available cleaning chemistries in the presence of Cu and organic, Si-based, and hybrid dielectrics.