{"title":"隧道氧化物厚度对闪存中非稳定擦除的影响","authors":"A. Chimenton, P. Olivo","doi":"10.1109/ESSDERC.2002.194944","DOIUrl":null,"url":null,"abstract":"Fowler-Nordheim erase in Flash Memories is intrinsically affected by the erratic phenomenon whose origin has physical aspects that are still obscure. This work presents new experimental results showing the impact of the oxide thickness on the erratic erase during cycling. The collected statistical results play a key role for the study of the charging/discharging properties of tunneling oxides.","PeriodicalId":207896,"journal":{"name":"32nd European Solid-State Device Research Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories\",\"authors\":\"A. Chimenton, P. Olivo\",\"doi\":\"10.1109/ESSDERC.2002.194944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fowler-Nordheim erase in Flash Memories is intrinsically affected by the erratic phenomenon whose origin has physical aspects that are still obscure. This work presents new experimental results showing the impact of the oxide thickness on the erratic erase during cycling. The collected statistical results play a key role for the study of the charging/discharging properties of tunneling oxides.\",\"PeriodicalId\":207896,\"journal\":{\"name\":\"32nd European Solid-State Device Research Conference\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"32nd European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2002.194944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"32nd European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2002.194944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories
Fowler-Nordheim erase in Flash Memories is intrinsically affected by the erratic phenomenon whose origin has physical aspects that are still obscure. This work presents new experimental results showing the impact of the oxide thickness on the erratic erase during cycling. The collected statistical results play a key role for the study of the charging/discharging properties of tunneling oxides.
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