I. Avci, P. Balasingam, V. Chawla, K. El-Sayed, M. Johnson, A. Kucherov, S. Li, B. Mishra, Y. Oh, B. Polsky, Z. Qin, S. Simeonov, S. Tian, X. Xu, W. Zhou, M. Zhu
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Computational analysis of mechanical and electromigration reliability problems
The reliability of complex interconnect structures at all levels of the chip integration hierarchy has become a major concern due to the use of fine feature sizes, diverse materials, and complex 3D architectures. Reliability issues range from stress related failures such as dielectric cracking and interface debonding during manufacturing to electrical and mechanical failures such as electromigration and void formation during operation. This paper summarizes computational results obtained using a unified physics-based 3D simulation framework.
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