在nd模MM的ESD应力中,不同功率域之间的接口电路会出现异常的ESD损伤

Hsiang-Pin Hung, M. Ker, Shih-Hung Chen, Che-Hao Chuang
{"title":"在nd模MM的ESD应力中,不同功率域之间的接口电路会出现异常的ESD损伤","authors":"Hsiang-Pin Hung, M. Ker, Shih-Hung Chen, Che-Hao Chuang","doi":"10.1109/IPFA.2006.251021","DOIUrl":null,"url":null,"abstract":"Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Abnormal ESD Damages Occur in Interface Circuits between Different Power Domains in ND-Mode MM ESD Stress\",\"authors\":\"Hsiang-Pin Hung, M. Ker, Shih-Hung Chen, Che-Hao Chuang\",\"doi\":\"10.1109/IPFA.2006.251021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

在具有多个分离功率域的集成电路的接口电路中,发现了复杂的ESD失效机制。该IC产品具有2kv HBM ESD稳健性,但在分离功率域的情况下,MM ESD稳健性不能达到150v。nd模式MM ESD电流通过接口电路的迂回电流路径放电,导致内部晶体管的栅极氧化物损坏、结丝损坏和触点破坏。本文详细分析了每次nd模式ESD失效的放电路径
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Abnormal ESD Damages Occur in Interface Circuits between Different Power Domains in ND-Mode MM ESD Stress
Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper
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