Hsiang-Pin Hung, M. Ker, Shih-Hung Chen, Che-Hao Chuang
{"title":"在nd模MM的ESD应力中,不同功率域之间的接口电路会出现异常的ESD损伤","authors":"Hsiang-Pin Hung, M. Ker, Shih-Hung Chen, Che-Hao Chuang","doi":"10.1109/IPFA.2006.251021","DOIUrl":null,"url":null,"abstract":"Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Abnormal ESD Damages Occur in Interface Circuits between Different Power Domains in ND-Mode MM ESD Stress\",\"authors\":\"Hsiang-Pin Hung, M. Ker, Shih-Hung Chen, Che-Hao Chuang\",\"doi\":\"10.1109/IPFA.2006.251021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Abnormal ESD Damages Occur in Interface Circuits between Different Power Domains in ND-Mode MM ESD Stress
Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction filament, and contact destroy of the internal transistors. The detailed discharging paths of each ND-mode ESD failure were analysed in this paper