粗化nippau - ag预镀框架的抗ebo粘结研究

Raymond Solis Cabral, Joseph Aaron Mesa Baquiran, Wu-Hu Li, Ariel Lizaba Miranda, M. Mercado
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引用次数: 7

摘要

本文研究了硅(Si)材料与粗化Ni/Pd/Au-Ag合金镀铜(Cu)引线框架(μPPF)之间的环氧材料在模具粘合过程中的挑战和行为。使用银(Ag)基环氧树脂的粗糙μPPF的模具粘接片(DAP)一直是其可制造性的挑战,因为它在300 μm Si芯片厚度下保持目标环氧圆角高度。利用ag基环氧树脂的模具粘结参数对标准镀银DAP Cu引线架上的μPPF进行粗化研究,得到的圆角高度大于模具厚度的最大目标极限75%,圆角高度最高可达100%。这种情况会导致环氧树脂成分爬上芯片表面的风险,这对可靠性有害(模具顶部分层),并且由于模具污染和焊盘不粘(NSOP)而导致制造成品率损失。粗化μPPF引线框架表面环氧树脂的可加工性需要确定,因为与镀银铜引线框架相比,其圆角高度结果存在显着差异,这对芯片组装质量有重大影响。将粗化μPPF的模具粘接工艺开发分为两个阶段,即环氧树脂点胶规模评估和模具粘接参数实验设计。环氧树脂涂胶规模评估研究了最佳的环氧胶覆盖范围,这将确保硅片下的环氧树脂体积一致(粘合线厚度或BLT),并实现沿硅片侧壁形成线性环氧圆角高度。一旦通过DoE确定了最佳分配规模,关键的模具粘合参数确定了一个参数窗口,在此窗口中可以观察到受控的圆角高度,而不会对环氧树脂的功能测试响应产生任何影响。研究表明,要实现硅片侧壁环氧圆角高度的最佳控制,需要较高的环氧点胶规模和最佳的模具粘结参数,即组件过行程距离和点胶高度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of die bond on roughened NiPdAu-Ag pre-plated frame with anti-EBO
This paper studies the challenges and behavior of epoxy material between the silicon (Si) material and roughened Ni/Pd/Au-Ag alloy-plated Copper (Cu) leadframe (known as μPPF) with anti-epoxy bleed-out (EBO) during die bond process. Die bond on die attach paddle (DAP) of roughened μPPF using Silver (Ag)-based epoxy has been a challenge for its manufacturability in terms of maintaining the target epoxy fillet height for a 300 μm Si chip thickness. The study on the roughened μPPF utilizing die bond parameters for Ag-based epoxy on standard Ag-plated DAP Cu leadframe yielded fillet height greater than the maximum target limit of 75% of die thickness and reaching as high as 100% fillet height. This occurrence leads to risks of epoxy component creeping onto the chip surface which is detrimental on reliability (delamination on die top) and can cause manufacturing yield loss due to die contamination and non-stick on pad (NSOP) during wire bonding. The processability of the epoxy on the surface of the roughened μPPF leadframe needs to be established due to this significant difference in fillet height result when compared to the Ag-plated Cu leadframe which has a major impact in the quality of the chip assembly. The development of the die bond process for the roughened μPPF is separated into two assessments, namely epoxy dispense scale assessment and die bond parameter design of experiment (DoE). The epoxy dispense scale assessment studies the optimum epoxy glue coverage with respect to chip area that will ensure a consistent epoxy volume underneath the Si chip (bond line thickness or BLT) and achieving a linear epoxy fillet height formation along the sidewall of the Si chip. Once the optimum dispense scale is established via DoE, the critical die bond parameters identify a parameter window where a controlled fillet height is observed without any impact on the functionality test response of the epoxy. The study shows that a high epoxy dispense scale and optimum die bond parameter, namely, component over travel distance and dispensing height are required to achieve an optimum epoxy fillet height control along the side wall of the Si chip.
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