基于III-V纳米线的微源与硅波导垂直耦合的光互连设计

Zhen Lin, M. Gendry, J. Harmand, X. Letartre
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引用次数: 1

摘要

我们在SOI波导上设计了一个基于III-V纳米线的光子腔,用于在硅光子电路中近红外(~1.3μm)产生光。利用三维电磁模拟(FDTD)设计了垂直生长在硅上的III-V光子NWs周期性阵列。这些微谐振器与SOI波导之间的高质量因数谐振和高效耦合是目标。通过仿真优化了该结构的几何参数(NWs的数量、直径和间距)。这种原始架构为硅光子学的低功耗和小足迹微源的单片集成开辟了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of III-V nanowires based micosources vertically coupled to a Si waveguide for optical interconnects
We design a III-V nanowires based photonic cavity on top of SOI waveguide for light generation in the near infrared (~1.3μm) in a silicon photonic circuit. 3D electromagnetic simulations (FDTD) are performed to design a periodic array of III-V photonic NWs vertically grown on Si. High quality factor resonances and efficient coupling between these micro-resonators and the SOI waveguide is targeted. The geometrical parameters of this architecture (number of NWs, diameter and spacing) are optimised by simulations. This original architecture opens the way to the monolithic integration of low power and small footprint microsources for silicon photonics.
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