带垂直微通孔的非平面密封硅外壳宽带集成电阻结构的加工与性能

56th Electronic Components and Technology Conference 2006 Pub Date : 2006-07-05 DOI:10.1109/ECTC.2006.1645860

C. Greisen, R. Hauffe, L. Shiv, S. Weichel, H. Korth, A. Kilian, M. Heschel, J. Kuhmann

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引用次数: 0

摘要

我们提出了将薄膜镍铬(NiCr)电阻集成到一个密封的3D结构硅封装平台中，用于晶圆级密封，并展示了它们作为宽带无源元件的性能。通过将材料沉积建模为单向磁通，可以设计腔侧壁上的电阻器

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Processing and performance of broadband integrated resistor structures on non-planar topologies in hermetic silicon enclosure with vertical micro vias

We present the integration of thin film nickel-chromium (NiCr) resistors into a hermetic, 3D structured silicon packaging platform for wafer level sealing and demonstrate their performance as broadband passive components. Resistors on the cavity side walls can be designed by modeling the material deposition as a unidirectional flux

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56th Electronic Components and Technology Conference 2006

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