定向自组装超细间距Cu-Cu键合的可行性研究

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947440

M. Murugesan, T. Fukushima, K. Mori, H. Hashimoto, J. Bea, M. Koyanagi

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引用次数: 2

摘要

采用定向自组装(DSA)现象的新概念，对含有超细间距铜着陆垫的LSI芯片间金属布线自形成的可行性进行了研究。初步结果表明，以3μm间距将两个具有Cu着陆垫的LSI芯片电互连是高度可行的。在280°C真空退火后，PS-b-PMMA(2:1)共聚物混合物中分散的Sn纳米点自形成倒装片键合模之间的电接触。

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Feasibility study on ultrafine-pitch Cu-Cu bonding using directed self-assembly (DSA)

A feasibility study was carried out for self-formation of metal wiring between LSI chips containing ultrafine-pitch Cu landing pads by employing a new concept of directed self-assembly (DSA) phenomena. Preliminary results suggest that it is highly feasible to electrically interconnect two LSI chips having Cu landing pads at 3μm pitch interval. Electrical contact between the flip-chip bonded dies was self-formed by dispersed Sn nano-dots in PS-b-PMMA (2:1) copolymer mixture after vacuum annealing at 280 °C.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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