{"title":"芯片级统计电迁移的实际意义","authors":"A. Schmitz","doi":"10.1109/IRPS.2012.6241867","DOIUrl":null,"url":null,"abstract":"The accurate setting of electromigration (EM) design guidelines early is necessary to achieve chip-level fail goals. The issue is even more critical with the recognition of the percentage fail as a stochastic issue based on the individual EM elements. The challenge is the degree to fix those elements prior to the knowledge of chip-level fail rate. This paper will demonstrate a test case and approaches to early design guidelines which have shown success at meeting chip-level EM fail goals.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"311 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Practical implications of chip-level statistical electromigration\",\"authors\":\"A. Schmitz\",\"doi\":\"10.1109/IRPS.2012.6241867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The accurate setting of electromigration (EM) design guidelines early is necessary to achieve chip-level fail goals. The issue is even more critical with the recognition of the percentage fail as a stochastic issue based on the individual EM elements. The challenge is the degree to fix those elements prior to the knowledge of chip-level fail rate. This paper will demonstrate a test case and approaches to early design guidelines which have shown success at meeting chip-level EM fail goals.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"311 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Practical implications of chip-level statistical electromigration
The accurate setting of electromigration (EM) design guidelines early is necessary to achieve chip-level fail goals. The issue is even more critical with the recognition of the percentage fail as a stochastic issue based on the individual EM elements. The challenge is the degree to fix those elements prior to the knowledge of chip-level fail rate. This paper will demonstrate a test case and approaches to early design guidelines which have shown success at meeting chip-level EM fail goals.