芯片级统计电迁移的实际意义

A. Schmitz
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引用次数: 6

摘要

早期准确设置电迁移(EM)设计指南对于实现芯片级故障目标是必要的。当我们意识到失败百分比是基于单个新兴市场元素的随机问题时,问题就变得更加关键了。挑战在于在了解芯片级故障率之前修复这些元素的程度。本文将展示一个测试用例和早期设计指南的方法,这些方法在满足芯片级EM失败目标方面取得了成功。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Practical implications of chip-level statistical electromigration
The accurate setting of electromigration (EM) design guidelines early is necessary to achieve chip-level fail goals. The issue is even more critical with the recognition of the percentage fail as a stochastic issue based on the individual EM elements. The challenge is the degree to fix those elements prior to the knowledge of chip-level fail rate. This paper will demonstrate a test case and approaches to early design guidelines which have shown success at meeting chip-level EM fail goals.
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