基于reram的物理不可克隆功能,在125°C下10年后误码率< 0.5%,适用于40nm嵌入式应用

Y. Yoshimoto, Y. Katoh, S. Ogasahara, Z. Wei, K. Kouno
{"title":"基于reram的物理不可克隆功能,在125°C下10年后误码率< 0.5%,适用于40nm嵌入式应用","authors":"Y. Yoshimoto, Y. Katoh, S. Ogasahara, Z. Wei, K. Kouno","doi":"10.1109/VLSIT.2016.7573433","DOIUrl":null,"url":null,"abstract":"This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 1010 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":"{\"title\":\"A ReRAM-based physically unclonable function with bit error rate < 0.5% after 10 years at 125°C for 40nm embedded application\",\"authors\":\"Y. Yoshimoto, Y. Katoh, S. Ogasahara, Z. Wei, K. Kouno\",\"doi\":\"10.1109/VLSIT.2016.7573433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 1010 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"42\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42

摘要

本文提出了一种利用电阻式随机存取存储器(ReRAM)物理特性的安全应用——物理不可克隆函数(PUF)。所提出的puf生成方法和再现算法在误码率<;0.5%,在125°C下10年后,在-40至125°C下繁殖超过1010次,通过NIST测试证明具有高度独特性。对40nm ReRAM测试芯片的评估已经证明了PUF增强的按比例缩小的ReRAM单元的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A ReRAM-based physically unclonable function with bit error rate < 0.5% after 10 years at 125°C for 40nm embedded application
This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 1010 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.
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