45nm节点与多孔sioch堆栈互连，适用于低成本封装应用

2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI:10.1109/IITC.2007.382384

N. Inoue, M. Tagami, F. Itoh, H. Yamamoto, T. Takeuchi, S. Saito, N. Furutake, M. Ueki, M. Tada, T. Suzuki, Y. Hayashi

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引用次数: 6

摘要

验证了keff=2.9的多孔sioch堆叠的45 nm节点互连在PGBA和QFP中具有实际可靠性。通过- ild与下SiCN覆盖层的粘附强度显著影响线-键合的可靠性，但在细间距键合垫内扩展键合线的接触面积抑制了低k堆栈结构中的键合失效，无论是否附加低k固化工艺。在PBGA封装和QFP可靠性测试中均未检测到故障，证实了45 nm节点ulsi低阈值互连的实用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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45nm-node Interconnects with Porous SiOCH-Stacks, Tolerant of Low-Cost Packaging Applications

The 45 nm-node interconnect with porous SiOCH-stacks of keff=2.9 is confirmed to have the practical reliability in PGBA and QFP. Adhesion strength of the via-ILD to the lower SiCN capping layer significantly impacts on the wire-bond reliability, but spreading the contact area of the bonding-wire within the fine-pitched bonding-pad suppresses the bonding failures in the low-k stack structures, irrespective of additional process of low-k curing or not. No failure was detected during reliability tests in PBGA package as well as QFP, confirming the practicality of the low keff interconnects for 45 nm-node ULSIs.

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2007 IEEE International Interconnect Technology Conferencee

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