4.5 kV新型高压高性能SiC-FET (SIAFET)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856783

Y. Sugawara, M. Asano, R. Singh, J. Palmour, D. Takayama

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引用次数: 25

摘要

提出了一种新型的高压SiC MOS器件SIAFET(静电感应注入累积场效应晶体管)，该器件的通流路径中没有pn结，并通过p+埋栅注入载流子进行电导率调制。采用6200 V的JTE平台，采用4H-SiC衬底，设计了阻塞电压(BV)为5500 V，比导通电阻(不含电导率调制)为57 m/spl ω /cm/sup 2/的SIAFET。它的基本操作已经首次得到证实，并且已经证明，通过SIAFET的作用，它的ron已经被证明减少到1/6以下。虽然其实现的BV相对较低(2030 V和4580 V)，其ron相对较高(172 m/spl Omega/cm/sup 2/和387 m/spl Omega/cm/sup 2/)，但4580 V SiC-SIAFET的ron小于该BV下Si-MOSFET理论ron极限的1/25。

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4.5 kV novel high voltage high performance SiC-FET "SIAFET"

A novel high voltage SiC MOS device named SIAFET (Static induction Injected Accumulated FET) is proposed, which has no pn junction in its on-current flow path and has a conductivity modulation by carriers injected from a p+ buried gate. SIAFET with blocking voltage (BV) of 5500 V and specific on-resistance RonS (without the conductivity modulation) of 57 m/spl Omega/cm/sup 2/ was designed by using the 6200 V mesa JTE and was fabricated using 4H-SiC substrates. Its basic operation has been confirmed for the first time and it has been demonstrated that its RonS has been shown to reduce to less than 1/6 by SIAFET action. Although its achieved BV is relatively low (2030 V and 4580 V) and its RonS is relatively high (172 m/spl Omega/cm/sup 2/ and 387 m/spl Omega/cm/sup 2/), RonS of 4580 V SiC-SIAFET is less than 1/25 that of the theoretical RonS limit of Si-MOSFET for this BV.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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