{"title":"环形压控振荡器设计中SOI本征mosfet的电势","authors":"D. Levacq, L. Vancaillie, D. Flandre","doi":"10.1109/SOI.2003.1242880","DOIUrl":null,"url":null,"abstract":"In this paper, we study the potential of SOI MOSFETs with non-doped (or intrinsic) channels. We demonstrate that their low threshold voltage (V/sub t/) and enhanced mobility lead to power consumption reduction. Moreover, they present significantly improved linearity.","PeriodicalId":329294,"journal":{"name":"2003 IEEE International Conference on SOI","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Potential of SOI intrinsic MOSFETs for ring VCO design\",\"authors\":\"D. Levacq, L. Vancaillie, D. Flandre\",\"doi\":\"10.1109/SOI.2003.1242880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we study the potential of SOI MOSFETs with non-doped (or intrinsic) channels. We demonstrate that their low threshold voltage (V/sub t/) and enhanced mobility lead to power consumption reduction. Moreover, they present significantly improved linearity.\",\"PeriodicalId\":329294,\"journal\":{\"name\":\"2003 IEEE International Conference on SOI\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 IEEE International Conference on SOI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2003.1242880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE International Conference on SOI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2003.1242880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Potential of SOI intrinsic MOSFETs for ring VCO design
In this paper, we study the potential of SOI MOSFETs with non-doped (or intrinsic) channels. We demonstrate that their low threshold voltage (V/sub t/) and enhanced mobility lead to power consumption reduction. Moreover, they present significantly improved linearity.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
