用富硅氧化物和氮化氧阻挡层减少FHDP等离子体引起的损伤

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309965

H. McCulloh, B. O'Connell, S. Drizlikh, D. Brisbin

{"title":"用富硅氧化物和氮化氧阻挡层减少FHDP等离子体引起的损伤","authors":"H. McCulloh, B. O'Connell, S. Drizlikh, D. Brisbin","doi":"10.1109/ICICDT.2004.1309965","DOIUrl":null,"url":null,"abstract":"Plasma damage resulting from fluorine doped High Density Plasma Deposition (FHDP) was investigated. A dielectric barrier layer placed either directly under the FHDP or directly over the gate was found to protect the gate oxide from plasma damage. The mechanism by which the dielectric layers counteract plasma damage from upper dielectric layers is investigated.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Reducing FHDP plasma induced damage with silicon-rich oxide and oxynitride barrier layers\",\"authors\":\"H. McCulloh, B. O'Connell, S. Drizlikh, D. Brisbin\",\"doi\":\"10.1109/ICICDT.2004.1309965\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma damage resulting from fluorine doped High Density Plasma Deposition (FHDP) was investigated. A dielectric barrier layer placed either directly under the FHDP or directly over the gate was found to protect the gate oxide from plasma damage. The mechanism by which the dielectric layers counteract plasma damage from upper dielectric layers is investigated.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309965\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

研究了氟掺杂高密度等离子体沉积(FHDP)对等离子体的损伤。在FHDP正下方或栅极正上方放置介质阻挡层，可以保护栅极氧化物免受等离子体损伤。研究了介质层抵消上部介质层等离子体损伤的机理。

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Reducing FHDP plasma induced damage with silicon-rich oxide and oxynitride barrier layers

Plasma damage resulting from fluorine doped High Density Plasma Deposition (FHDP) was investigated. A dielectric barrier layer placed either directly under the FHDP or directly over the gate was found to protect the gate oxide from plasma damage. The mechanism by which the dielectric layers counteract plasma damage from upper dielectric layers is investigated.

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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