采用等离子体增强单体气相聚合(PE-MVP)方法实现低钾bcb聚合物与高性能Cu互连

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799332

J. Kawahara, A. Nakano, S. Saito, K. Kinoshita, T. Onodera, Y. Hayashi

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引用次数: 8

摘要

采用等离子体增强有机单体气相聚合(PE-MVP)方法制备了低介电常数k=2.7的二乙烯基硅氧烷双苯并环丁烯(DVS-BCB)聚合物薄膜。PE-MVP方法消除了DVS-BCB在聚合过程中的聚合物氧化，提高了热稳定性。通过将MOCVD-Cu技术与PE-MVP技术相结合，窄间距Cu/BCB damascenline显示，与Cu/SiO/sub 2/ line相比，线路电容降低了35%，而线间泄漏电流保持在5/spl倍/10/sup -9/ a /cm/sup 2/以下。

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High performance Cu interconnects with low-k BCB-polymers by plasma-enhanced monomer-vapor polymerization (PE-MVP) method

A new plasma-enhanced organic monomer-vapor polymerization (PE-MVP) method is developed for deposition of divinyl siloxane bis-benzocyclobutene (DVS-BCB) polymer films with low dielectric constant, k=2.7. The PE-MVP method eliminates polymer oxidation of DVS-BCB during polymerization, improving the thermal stability. By combining the MOCVD-Cu technique with the PE-MVP, narrow-pitch Cu/BCB damascene lines reveal a 35% reduction in the line capacitance compared to Cu/SiO/sub 2/ lines, while the interline leakage current is kept as low as 5/spl times/10/sup -9/ A/cm/sup 2/.

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1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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