氮化氧薄膜的可制造性比较

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI:10.1109/RTP.2005.1613694

H. Preuss, J. Nakos, E. Adams, J. Burnham

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引用次数: 0

摘要

薄膜氮化在线宽低于0.13微米的半导体加工中有着广泛的应用。我们评估了几种能够制造氮化氧薄膜的单晶片加工方案。分析结果采用椭偏仪、x射线光电子能谱(XPS)和TOFSIMS。这些控制方法还与电气性能数据进行了比较。数据也审查了制造要求，如刀具对刀具匹配和工艺能力;包括腔室到腔室、晶圆到晶圆和晶圆内部的可变性

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Manufacturability comparison of thin oxynitride films

Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. These control methods are also compared to electrical performance data. Data are also reviewed with respect to manufacturing requirements such as tool-to-tool matching and process capability; including chamber to chamber, wafer to wafer and within wafer variability

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来源期刊

2005 13th International Conference on Advanced Thermal Processing of Semiconductors

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