{"title":"酸性镀铜添加剂对高温贮存过程中空穴形成的影响","authors":"Ronizan bin Mohd Salleh, Lai Chin Yung","doi":"10.1109/EPTC.2015.7412410","DOIUrl":null,"url":null,"abstract":"Formation of voids at the interface between Cu/Cu3Sn or within Cu3Sn phase can be observed when Sn plated on electrolytic copper surface is subjected to High Temperature Storage of 150°C for 1000 hours. In this study, acid copper plating system consists of organic additives was used for the copper plating process. Without copper plating additives brightener and leveller, minimum voids were distributed uniformly at Cu3Sn phase. Addition of SPS or brightener to the system without leveller or PEG showed the density of voids became more and distributed along the Cu/Cu3Sn interface. However, when leveller been introduced to the system containing the brightener, the cross section showed the voids were reduced and uniformly distributed along the Cu3Sn layer.","PeriodicalId":418705,"journal":{"name":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of acid copper plating additives on void formation during high temperature storage\",\"authors\":\"Ronizan bin Mohd Salleh, Lai Chin Yung\",\"doi\":\"10.1109/EPTC.2015.7412410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Formation of voids at the interface between Cu/Cu3Sn or within Cu3Sn phase can be observed when Sn plated on electrolytic copper surface is subjected to High Temperature Storage of 150°C for 1000 hours. In this study, acid copper plating system consists of organic additives was used for the copper plating process. Without copper plating additives brightener and leveller, minimum voids were distributed uniformly at Cu3Sn phase. Addition of SPS or brightener to the system without leveller or PEG showed the density of voids became more and distributed along the Cu/Cu3Sn interface. However, when leveller been introduced to the system containing the brightener, the cross section showed the voids were reduced and uniformly distributed along the Cu3Sn layer.\",\"PeriodicalId\":418705,\"journal\":{\"name\":\"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2015.7412410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2015.7412410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of acid copper plating additives on void formation during high temperature storage
Formation of voids at the interface between Cu/Cu3Sn or within Cu3Sn phase can be observed when Sn plated on electrolytic copper surface is subjected to High Temperature Storage of 150°C for 1000 hours. In this study, acid copper plating system consists of organic additives was used for the copper plating process. Without copper plating additives brightener and leveller, minimum voids were distributed uniformly at Cu3Sn phase. Addition of SPS or brightener to the system without leveller or PEG showed the density of voids became more and distributed along the Cu/Cu3Sn interface. However, when leveller been introduced to the system containing the brightener, the cross section showed the voids were reduced and uniformly distributed along the Cu3Sn layer.