硼掺杂对GeTe相变存储器的影响分析

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241873

C. Sandhya, A. Bastard, L. Perniola, J. Bastien, A. Toffoli, E. Henaff, A. Roule, A. Persico, B. Hyot, V. Sousa, B. De Salvo, G. Reimbold

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引用次数: 4

摘要

本文首次评价了硼掺杂GeTe相变存储器(PCM)的电学行为。我们的研究结果表明，B掺杂可以使RESET电流降低25%，并且在SET和RESET状态之间具有良好的电阻对比。控制SET动态的另一个好处是有利于MLC应用。最后，我们证明了硼掺杂GeTe相变材料保持了良好的器件耐久性可靠性。

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Analysis of the effect of boron doping on GeTe Phase Change Memories

For the first time, we evaluate the electrical behavior of boron doped GeTe Phase-Change Memories (PCM). Our results demonstrate 25% RESET current reduction and excellent resistance contrast between SET and RESET states with B doping. A further benefit of controlled SET dynamics makes it favorable for MLC applications. Finally, we demonstrate that boron doped GeTe phase change materials maintain good device endurance reliability.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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