{"title":"应力诱导铝空洞形成的抑制","authors":"H. Koyama, Y. Mashiko, T. Nishioka","doi":"10.1109/IRPS.1986.362107","DOIUrl":null,"url":null,"abstract":"It is found that aluminum void formation can be suppressed by mercury light irradiation of plasma enhanced chemical vapor deposition silicon nitride filmn coatings. Light beam induced stress relaxation of the SiN film is responsible for the suppression. We believe that presence of hydrogen in the aluminum lattice would create micro voids which aggregate into aluminum voids by the applied stress of the silicon nitride film.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Suppression of Stress Induced Aluminum Void Formation\",\"authors\":\"H. Koyama, Y. Mashiko, T. Nishioka\",\"doi\":\"10.1109/IRPS.1986.362107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is found that aluminum void formation can be suppressed by mercury light irradiation of plasma enhanced chemical vapor deposition silicon nitride filmn coatings. Light beam induced stress relaxation of the SiN film is responsible for the suppression. We believe that presence of hydrogen in the aluminum lattice would create micro voids which aggregate into aluminum voids by the applied stress of the silicon nitride film.\",\"PeriodicalId\":354436,\"journal\":{\"name\":\"24th International Reliability Physics Symposium\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1986.362107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1986.362107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Suppression of Stress Induced Aluminum Void Formation
It is found that aluminum void formation can be suppressed by mercury light irradiation of plasma enhanced chemical vapor deposition silicon nitride filmn coatings. Light beam induced stress relaxation of the SiN film is responsible for the suppression. We believe that presence of hydrogen in the aluminum lattice would create micro voids which aggregate into aluminum voids by the applied stress of the silicon nitride film.
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