PMOS器件受NBTI应力后Pb中心-氢配合物的证据- DCIV/SDR联合研究

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241932

T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel

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引用次数: 4

摘要

研究了30nm和5nm SiO2 PMOS器件负偏置温度应力(NBTS)后Si/SiO2界面的深度缺陷。利用直流电压(DCIV)技术进行电特性表征，揭示了两种具有不同能级、恢复和降解动力学的缺陷。为了研究它们的微物理性质，我们进行了自旋相关复合(SDR)。除了常规的铅中心外，我们还发现了铅中心-氢配合物的证据。

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Evidence for Pb center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study

We study deep level defects at the Si/SiO2 interface of 30nm and 5nm SiO2 PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform spin dependent recombination (SDR). Besides conventional Pb centers we also find evidence for Pb center-hydrogen complexes.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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