靠近SOA边缘的多指SiGe hbt的物理、小信号和脉冲热阻抗特性

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-18 DOI:10.1109/ICMTS.2019.8730964

M. Couret, G. Fischer, S. Frégonèse, T. Zimmer, C. Maneux

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引用次数: 7

摘要

提出了单指和多指SiGe异质结双极晶体管的热阻抗模型。通过装置的热流分析必须考虑两个扩散部分:前端线(FEOL)扩散和后端线(BEOL)扩散。因此，这种新的热阻抗模型具有多极网络特征，并已纳入到HiCuM L2紧凑型模型中。将HiCuM紧凑型模型的仿真结果与室温下的片上低频s参数测量结果进行了比较，突出了器件自热机制的频率依赖性。仿真结果还与脉冲测量结果进行了比较，以提高可靠性分析。

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Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

A thermal impedance model of single-finger and multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented. The heat flow analysis through the device has to be considered in two diffusion parts: the front-end-of-line (FEOL) diffusion and the back-end-of-line (BEOL) diffusion. Therefore, this new thermal impedance model features multi-poles network which has been incorporated in HiCuM L2 compact model. The HiCuM compact model simulation results are compared with on-wafer low-frequency S-parameters measurements at room temperature highlighting the device frequency dependence of self-heating mechanism. The simulation results are also compared to pulse measurements to improve reliability analysis.

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来源期刊

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

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