时变全芯片加热与量子非等温器件操作的耦合建模

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233699

A. Akturk, N. Goldsman, G. Metze

{"title":"时变全芯片加热与量子非等温器件操作的耦合建模","authors":"A. Akturk, N. Goldsman, G. Metze","doi":"10.1109/SISPAD.2003.1233699","DOIUrl":null,"url":null,"abstract":"A method for predicting full chip temperature heating resulting from device operation is presented. The method couples distributed device simulation with lumped thermal analysis. Predictions show sixty degree Kelvin temperature increases for 0.5 cm IC's. A method for reducing chip temperature is also presented.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation\",\"authors\":\"A. Akturk, N. Goldsman, G. Metze\",\"doi\":\"10.1109/SISPAD.2003.1233699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method for predicting full chip temperature heating resulting from device operation is presented. The method couples distributed device simulation with lumped thermal analysis. Predictions show sixty degree Kelvin temperature increases for 0.5 cm IC's. A method for reducing chip temperature is also presented.\",\"PeriodicalId\":220325,\"journal\":{\"name\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2003.1233699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

提出了一种预测器件运行引起的全芯片温度升温的方法。该方法将分布式器件仿真与集总热分析相结合。预测显示0.5 cm IC的温度会升高60°k。提出了一种降低芯片温度的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation

A method for predicting full chip temperature heating resulting from device operation is presented. The method couples distributed device simulation with lumped thermal analysis. Predictions show sixty degree Kelvin temperature increases for 0.5 cm IC's. A method for reducing chip temperature is also presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

自引率

0.00%

发文量