通孔结构中温度和电流密度分布的三维模拟

K. Weide, W. Hasse
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引用次数: 10

摘要

利用有限元软件ANSYS对不同形式和工艺的通孔结构进行模拟,研究了几何形状(重叠、台阶覆盖、填充比)和填充材料对温度和电流密度分布的影响。研究了方形、圆形和椭圆形的过孔。观察通孔充填对其影响。结果表明,填充钨的通孔减小了电流拥挤和自热效应。确定了充填材料的关键参数。显示了局部温度和电流密度分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3-dimensional simulations of temperature and current density distribution in a via structure
The influence of geometry (overlap, step coverage, filling ratio), and filling material on temperature and current density distributions in via structures of different forms and technologies simulated with the finite element method program ANSYS was studied. Vias of square, circular, and oval forms were investigated. The influence of via filling was observed. Reduction of current crowding and self-heating effects were found for the tungsten-filled via. Critical parameters for the filling materials were determined. Local temperature and current density distributions are shown.<>
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