超临界流体沉积(SCFD) Cu膜作为电镀种子层的连续性评价

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI:10.1109/ICMTS.2019.8730945

Naoto Usamil, Etsuko Ota, A. Higo, T. Momose, Y. Mita

{"title":"超临界流体沉积(SCFD) Cu膜作为电镀种子层的连续性评价","authors":"Naoto Usamil, Etsuko Ota, A. Higo, T. Momose, Y. Mita","doi":"10.1109/ICMTS.2019.8730945","DOIUrl":null,"url":null,"abstract":"We evaluated supercritical fluid deposition (SCFD) copper thin films compatibility as a seed layer of electroplating processes. SCFD is an attractive technology for conformal metal coating on walls of high-aspect-ratio micro / nano structures (HARMS / HARNS), including trenches and holes. Therefore, it has a great potential for an electroplating seed layer. To utilize SCFD films as seed layers, we assessed the electrical and topological continuity of the SCFD films. The electrical measurements efficiently identified the suitability of various SCFD films for the electroplating process, which could not be achieved by microscope observation. The results have been cross-validated by atomic force microscopy.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Continuity assessment for supercritical-fluids-deposited (SCFD) Cu film as electroplating seed layer\",\"authors\":\"Naoto Usamil, Etsuko Ota, A. Higo, T. Momose, Y. Mita\",\"doi\":\"10.1109/ICMTS.2019.8730945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We evaluated supercritical fluid deposition (SCFD) copper thin films compatibility as a seed layer of electroplating processes. SCFD is an attractive technology for conformal metal coating on walls of high-aspect-ratio micro / nano structures (HARMS / HARNS), including trenches and holes. Therefore, it has a great potential for an electroplating seed layer. To utilize SCFD films as seed layers, we assessed the electrical and topological continuity of the SCFD films. The electrical measurements efficiently identified the suitability of various SCFD films for the electroplating process, which could not be achieved by microscope observation. The results have been cross-validated by atomic force microscopy.\",\"PeriodicalId\":333915,\"journal\":{\"name\":\"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2019.8730945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2019.8730945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们评估了超临界流体沉积(SCFD)铜薄膜作为电镀工艺种子层的相容性。SCFD是一种有吸引力的技术，用于高纵横比微/纳米结构(HARMS / HARNS)的墙壁上的保形金属涂层，包括沟槽和孔。因此，它在电镀种子层方面具有很大的潜力。为了利用SCFD薄膜作为种子层，我们评估了SCFD薄膜的电和拓扑连续性。电测量有效地确定了各种SCFD薄膜对电镀过程的适用性，这是显微镜观察无法实现的。结果已被原子力显微镜交叉验证。

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Continuity assessment for supercritical-fluids-deposited (SCFD) Cu film as electroplating seed layer

We evaluated supercritical fluid deposition (SCFD) copper thin films compatibility as a seed layer of electroplating processes. SCFD is an attractive technology for conformal metal coating on walls of high-aspect-ratio micro / nano structures (HARMS / HARNS), including trenches and holes. Therefore, it has a great potential for an electroplating seed layer. To utilize SCFD films as seed layers, we assessed the electrical and topological continuity of the SCFD films. The electrical measurements efficiently identified the suitability of various SCFD films for the electroplating process, which could not be achieved by microscope observation. The results have been cross-validated by atomic force microscopy.

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2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

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