先进器件中n型掺杂锗接触电阻的提取与评价

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044191

M. Shayesteh, C. Daunt, D. O'Connell, V. Djara, M. White, B. Long, R. Duffy

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引用次数: 1

摘要

利用传递长度法提取了掺磷和掺砷锗上nge层的接触电阻率。实验表明，植入剂量越大，接触电阻率越低。此外，在低活化退火温度(如500°C)下，磷在接触电阻和片电阻方面是较好的选择。评估了高接触电阻对22纳米及以上技术NMOS锗器件的影响。

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N-type doped germanium contact resistance extraction and evaluation for advanced devices

The authors extract contact resistivity of NiGe layers on phosphorus-doped and arsenic-doped germanium, using the Transfer Length Method. It is shown experimentally that higher implant dose yields lower contact resistivity. Furthermore phosphorus is a better choice of dopant in terms of contact resistance and sheet resistance at low activation anneal temperatures, such as 500 °C. The impact of high contact resistance is evaluated for 22 nm technology NMOS germanium devices and beyond.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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