在亚30nm NAND闪存器件中，邻近单元晶体管场效应引起的一种新的GIDL现象及其控制方法

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242442

I. Park, Wook-Ghee Hahn, Ki-Whan Song, Kiwhan Choi, H. Choi, S. Lee, Changsub Lee, J. Song, Jin-Man Han, Kye Hyun Kyoung, Young-Hyun Jun

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引用次数: 7

摘要

提出了一种新的NAND闪存串中IGIDL的场效应机制。根据所提出的5端GIDL模型，需要特别注意优化抑制方案的偏置水平。建议的增量偏置方案可以作为减少临界场的解决方案之一，从而提高效率和内存产量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new GIDL phenomenon by field effect of neighboring cell transistors and its control solutions in sub-30 nm NAND flash devices

We present a new field effect mechanism on IGIDL in NAND flash strings. According to the proposed 5-terminal GIDL model, special care should be taken to optimize the biasing levels of inhibit scheme. Suggested incremental biasing scheme can be one of the solutions for reducing critical field that enhances boosting efficiency and maximizes memory yields.

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2012 Symposium on VLSI Technology (VLSIT)

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