UV退火处理下Ga-Sn-O TFT的特性分析

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581896

Kenta Tanino, R. Takagi, M. Kimura, T. Matsuda

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引用次数: 0

摘要

我们在室温下采用射频磁控溅射技术和254 nm的紫外退火处理，成功地制备了用于薄膜晶体管(TFT)的Ga-Sn-O (GTO)薄膜。场效应迁移率为3.53 cm2/V·s，表明制备非晶金属氧化物半导体的可能性。

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Characteristic Analysis of Ga-Sn-O TFT Subjected to UV Annealing Treatment

We succeeded in forming a Ga-Sn-O (GTO) film for a thin film transistor (TFT) by using a RF magnetron sputtering at room temperature and applying UV annealing (254 nm) treatment. The field effect mobility is 3.53 cm2/V · S. This result suggests the possibility of a rare metal free amorphous metal oxide semiconductor.

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2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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