{"title":"多级互连中三种通孔电迁移失效模式","authors":"T. Yamaha, M. Naitou, T. Hotta","doi":"10.1109/RELPHY.1992.187668","DOIUrl":null,"url":null,"abstract":"The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the opened via has revealed that at least three kinds of failure modes exist for via electromigration. Models for the failure mechanism in each metallization system are discussed.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Three kinds of via electromigration failure mode in multilevel interconnections\",\"authors\":\"T. Yamaha, M. Naitou, T. Hotta\",\"doi\":\"10.1109/RELPHY.1992.187668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the opened via has revealed that at least three kinds of failure modes exist for via electromigration. Models for the failure mechanism in each metallization system are discussed.<<ETX>>\",\"PeriodicalId\":154383,\"journal\":{\"name\":\"30th Annual Proceedings Reliability Physics 1992\",\"volume\":\"151 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual Proceedings Reliability Physics 1992\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1992.187668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three kinds of via electromigration failure mode in multilevel interconnections
The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the opened via has revealed that at least three kinds of failure modes exist for via electromigration. Models for the failure mechanism in each metallization system are discussed.<>
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