辐射硬化MOSFET的仿真、表征及参数提取

2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India) Pub Date : 2019-02-01 DOI:10.1109/MOS-AK.2019.8902358

Jay Hind Kumar Verma, Sudip Ghosh, Ashutosh Yadav, Y. Chauhan

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引用次数: 1

摘要

辐射硬化设计(RHBD)设备用于空间应用，以免受辐射影响。本文通过器件模拟器研究了本体RHBD器件宽度和长度变化的器件特性。通过IC-CAP的全局缩放，采用BSIM-BULK模型对结果进行了比较和拟合。在不同的器件宽度和通道长度下，评估了器件在漏极电流、跨导和漏极电导方面的特性。在拟合器件特性时，对模型中的各项参数进行相应的改变，使其覆盖整个效果，从而在线性区和饱和区对上述所有器件形成一张全局模型卡。

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Simulation, Characterization and Parameter Extraction of Radiation Hardened MOSFET

Radiation Hardened by design (RHBD) devices are used for space applications to immune from radiation effects. Here, aforementioned device characteristics of bulk RHBD device is investigated for width and length variation through device simulator. Results are compared and fitted using BSIM-BULK model through global scaling using IC-CAP. Device characteristics in terms of drain current, trans-conductance and drain conductance are evaluated at different device width and channel length. For fitting of the device characteristics, various parameters in the model are changed accordingly to cover the whole effect to form a global model card for all the mentioned devices in linear and saturation regions.

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2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)

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